RLD78MA-E laser diodes 1/3 algaas laser diodes RLD78MA-E the rld-78ma-e is world?s first mass-produced laser diodes that is manufactured by molecular beam epitaxy. the signal-to-noise ratio is stable in comparison to conventional manufacturing techniques. this device is ideal for use in compact disc players. ! ! ! ! applications compact disc players ! ! ! ! features 1) signal-to-noise ratio guaranteed over entire operating temperature range. 2) reduced facet reflection. 3) one-third the dispersion compared with conventional laser diodes. 4) high-precision, compact package. ! ! ! ! external dimensions (units : mm) 2.3 + 0 1.0min. 3.6 4.4 + 0 1.0 0.1 0.4 0.1 (1.27) 1.2?.1 6.5?.5 3 ? 0.45 (2) (1) (3) ? 0.025 5.6 90? 2? glass window chip l.d. p.d. (1) (2) (3) m t y p e ! ! ! ! absolute maximum ratings (tc=25 c) c c v v mw unit limits 5 2 30 ? 10~ + 60 ? 40~ + 85 symbol p o v r v r (pin) topr tstg parameter output laser pin photodiode operating temperature storage temperature reverse voltage
RLD78MA-E laser diodes 2/3 ! ! ! ! electrical and optical characteristics (tc=25 c) parameter symbol min. typ. max. unit conditions i th ma ? 35 60 ? i op ma ? 45 70 p o = 3mw i m ma 0.1 0.2 0.6 // ? deg 81115 ? deg 20 37 45 p o = 3mw ? // deg ?? 2 nm 770 785 810 p o = 3mw s/n db 60 ?? f = 720khz, ? f = 10khz ? deg ?? 3 ? y ? z ? x m ?? 80 ? v op v ? 1.9 2.3 mw/ma 0.1 0.25 0.6 p o = 3mw i(3mw) ? i(1mw) 2mw p o = 3mw, v r(pin) = 15v parallel deviation angle parallel divergence angle perpendicular deviation angle emission point accuracy peak emission wavelength perpendicular divergence angle monitor current differential efficiency operating voltage operating current threshold current signal-to-noise ratio ? // and are defined as the angle within which the intensity is 50% of the peak value. ! ! ! ! electrical and optical characteristic curves optical power : p o (mw) operating current : i f (ma) 10 0 1 2 3 4 5 20 30 40 50 60 70 80 60 c 40 c 25 c 10 c 0 c ? 10 c fig.1 optical output vs.operating current threshold current : i th (ma) package temperature : t c ( c) ? 10 0 10 ? 20 20 30 40 50 60 70 10 100 90 80 70 60 50 40 30 20 fig.2 dependence of threshold current on temperature 1.0 0.5 0 ? 40 0 40 relative optical intensity angle ( deg) d direction // direction fig.3 far field pattern wavelength : ( nm) package temperature : tc ( c) ? 10 ? 20 790 780 770 760 800 0102030405060 fig.4 dependence of wavelength on temperature relative optical intensity wavelength : (nm) 785 795 790 800 805 t c =25 c p o =5mw p o =3mw p o =1mw fig.5 dependence of emission spectrum on optical output optical intensity : p o (mw) monitor current : i m (ma) 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 fig.6 monitor current vs.optical output
RLD78MA-E laser diodes 3/3 f=720khz ? f=10khz p o =3mw 20 60 50 40 30 10 -14 2 5 2 5 2 5 10 -13 10 -12 10 -11 100 90 80 70 s/n (db) relative optical to noise ratio : rin (hz -1 ) temperature ( c) fig.7 temperature dependence of noise s/n (db) 10 0 0.01 0.1 1 10 -14 10 -13 10 -12 10 -11 10 -10 100 90 80 70 60 f=720khz ? f=10khz t=25 c p o =3mw relative optical to noise ratio : rin (hz -1 ) optical feedback (%) fig.8 dependence of noise on optical feedback
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